| Manufacturer | |
| Mfr. Part # | SIHB24N65E-E3 |
| EBEE Part # | E87316105 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 24A 145mΩ@10V,12A 250W 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.6632 | $ 8.6632 |
| 200+ | $3.4572 | $ 691.4400 |
| 500+ | $3.3422 | $ 1671.1000 |
| 1000+ | $3.2838 | $ 3283.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHB24N65E-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 24A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 145mΩ@10V,12A | |
| Power Dissipation (Pd) | 250W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 2.74nF@100V | |
| Total Gate Charge (Qg@Vgs) | 122nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $8.6632 | $ 8.6632 |
| 200+ | $3.4572 | $ 691.4400 |
| 500+ | $3.3422 | $ 1671.1000 |
| 1000+ | $3.2838 | $ 3283.8000 |
