| Manufacturer | |
| Mfr. Part # | SIHA6N65E-E3 |
| EBEE Part # | E83290251 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 18A 0.6Ω@10V,3A 31W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3753 | $ 1.3753 |
| 200+ | $0.5323 | $ 106.4600 |
| 500+ | $0.5146 | $ 257.3000 |
| 1000+ | $0.5040 | $ 504.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHA6N65E-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.6Ω@10V,3A | |
| Power Dissipation (Pd) | 31W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF@100V | |
| Input Capacitance (Ciss@Vds) | 820pF | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3753 | $ 1.3753 |
| 200+ | $0.5323 | $ 106.4600 |
| 500+ | $0.5146 | $ 257.3000 |
| 1000+ | $0.5040 | $ 504.0000 |
