| Manufacturer | |
| Mfr. Part # | SIHA2N80E-GE3 |
| EBEE Part # | E86679994 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 1.8A 29W 2.38Ω@10V,1A 2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.9678 | $ 1.9678 |
| 200+ | $0.7860 | $ 157.2000 |
| 500+ | $0.7599 | $ 379.9500 |
| 1000+ | $0.7460 | $ 746.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHA2N80E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 1.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.38Ω@10V,1A | |
| Power Dissipation (Pd) | 29W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Input Capacitance (Ciss@Vds) | 315pF@100V | |
| Total Gate Charge (Qg@Vgs) | 19.6nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.9678 | $ 1.9678 |
| 200+ | $0.7860 | $ 157.2000 |
| 500+ | $0.7599 | $ 379.9500 |
| 1000+ | $0.7460 | $ 746.0000 |
