| Manufacturer | |
| Mfr. Part # | SIHA21N65EF-E3 |
| EBEE Part # | E85899993 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 21A 180mΩ@10V,11A 35W 2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.8213 | $ 6.8213 |
| 200+ | $2.7217 | $ 544.3400 |
| 500+ | $2.6304 | $ 1315.2000 |
| 1000+ | $2.5866 | $ 2586.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHA21N65EF-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 21A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 180mΩ@10V,11A | |
| Power Dissipation (Pd) | 35W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Input Capacitance (Ciss@Vds) | 2.322nF@100V | |
| Total Gate Charge (Qg@Vgs) | 106nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.8213 | $ 6.8213 |
| 200+ | $2.7217 | $ 544.3400 |
| 500+ | $2.6304 | $ 1315.2000 |
| 1000+ | $2.5866 | $ 2586.6000 |
