| Manufacturer | |
| Mfr. Part # | SIHA12N60E-E3 |
| EBEE Part # | E86816589 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 7.8A 380mΩ@10V,6A 33W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.3295 | $ 3.3295 |
| 200+ | $1.3289 | $ 265.7800 |
| 500+ | $1.2851 | $ 642.5500 |
| 1000+ | $1.2632 | $ 1263.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHA12N60E-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 7.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 380mΩ@10V,6A | |
| Power Dissipation (Pd) | 33W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF@100V | |
| Input Capacitance (Ciss@Vds) | 937pF@100V | |
| Total Gate Charge (Qg@Vgs) | 58nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.3295 | $ 3.3295 |
| 200+ | $1.3289 | $ 265.7800 |
| 500+ | $1.2851 | $ 642.5500 |
| 1000+ | $1.2632 | $ 1263.2000 |
