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Vishay Intertech SIE810DF-T1-E3
| Manufacturer | |
| Mfr. Part # | SIE810DF-T1-E3 |
| EBEE Part # | E87011024 |
| Package | PolArPAK-10 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 25A 1.4mΩ@10V,25A 1.3V@250uA 1 N-channel PolArPAK-10 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7194 | $ 4.7194 |
| 200+ | $1.8839 | $ 376.7800 |
| 500+ | $1.8211 | $ 910.5500 |
| 1000+ | $1.7899 | $ 1789.9000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIE810DF-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 25A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4mΩ@10V,25A | |
| Power Dissipation (Pd) | 5.2W;125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 1000pF@10V | |
| Input Capacitance (Ciss@Vds) | 13nF@10V | |
| Total Gate Charge (Qg@Vgs) | 300nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.7194 | $ 4.7194 |
| 200+ | $1.8839 | $ 376.7800 |
| 500+ | $1.8211 | $ 910.5500 |
| 1000+ | $1.7899 | $ 1789.9000 |
