Recommonended For You
Images are for reference only
Add to Favourites
Vishay Intertech SIE808DF-T1-GE3
| Manufacturer | |
| Mfr. Part # | SIE808DF-T1-GE3 |
| EBEE Part # | E86228023 |
| Package | PolArPAK-10 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 60A 1.6mΩ@10V,25A 3V@250uA 1 N-channel PolArPAK-10 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6721 | $ 5.6721 |
| 200+ | $2.2637 | $ 452.7400 |
| 500+ | $2.1888 | $ 1094.4000 |
| 1000+ | $2.1504 | $ 2150.4000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIE808DF-T1-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 60A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.6mΩ@10V,25A | |
| Power Dissipation (Pd) | 5.2W;125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 600pF@10V | |
| Input Capacitance (Ciss@Vds) | 8.8nF@10V | |
| Total Gate Charge (Qg@Vgs) | 155nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.6721 | $ 5.6721 |
| 200+ | $2.2637 | $ 452.7400 |
| 500+ | $2.1888 | $ 1094.4000 |
| 1000+ | $2.1504 | $ 2150.4000 |
