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Vishay Intertech SIE802DF-T1-E3
| Manufacturer | |
| Mfr. Part # | SIE802DF-T1-E3 |
| EBEE Part # | E86816575 |
| Package | PolArPAK-10 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 60A 1.9mΩ@10V,23.6A 2.7V@250uA 1 N-channel PolArPAK-10 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.7845 | $ 5.7845 |
| 200+ | $2.3093 | $ 461.8600 |
| 500+ | $2.2309 | $ 1115.4500 |
| 1000+ | $2.1926 | $ 2192.6000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIE802DF-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 60A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.9mΩ@10V,23.6A | |
| Power Dissipation (Pd) | 5.2W;125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA | |
| Input Capacitance (Ciss@Vds) | 7nF@15V | |
| Total Gate Charge (Qg@Vgs) | 160nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.7845 | $ 5.7845 |
| 200+ | $2.3093 | $ 461.8600 |
| 500+ | $2.2309 | $ 1115.4500 |
| 1000+ | $2.1926 | $ 2192.6000 |
