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Vishay Intertech SI8812DB-T2-E1


Manufacturer
Mfr. Part #
SI8812DB-T2-E1
EBEE Part #
E8727314
Package
UFBGA-4
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
20V 3.2A 59mΩ@4.5V,1A 500mW 400mV@250uA 1 N-channel UFBGA-4 MOSFETs ROHS
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Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.1886$ 0.1886
200+$0.0730$ 14.6000
500+$0.0705$ 35.2500
1000+$0.0692$ 69.2000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI8812DB-T2-E1
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)3.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)59mΩ@4.5V,1A
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)400mV@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Input Capacitance (Ciss@Vds)0.14pF@20V
Total Gate Charge (Qg@Vgs)17nC@8V

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