| Manufacturer | |
| Mfr. Part # | SI8810EDB-T2-E1 |
| EBEE Part # | E8145308 |
| Package | BGA-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 2.9A 0.072Ω@4.5V,1A 500mW 900mV@250uA 1 N-channel BGA-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3673 | $ 0.3673 |
| 10+ | $0.3597 | $ 3.5970 |
| 30+ | $0.3551 | $ 10.6530 |
| 100+ | $0.3505 | $ 35.0500 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI8810EDB-T2-E1 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 125mΩ@1.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 900mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Current - Continuous Drain(Id) | 2.9A | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 8nC@8V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3673 | $ 0.3673 |
| 10+ | $0.3597 | $ 3.5970 |
| 30+ | $0.3551 | $ 10.6530 |
| 100+ | $0.3505 | $ 35.0500 |
