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Vishay Intertech SI8808DB-T2-E1


Manufacturer
Mfr. Part #
SI8808DB-T2-E1
EBEE Part #
E8145290
Package
BGA-4
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
30V 1.8A 95mΩ@4.5V,1A 500mW 900mV@250uA 1 N-channel BGA-4 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.7207$ 0.7207
10+$0.7066$ 7.0660
30+$0.6959$ 20.8770
100+$0.6852$ 68.5200
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI8808DB-T2-E1
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)1.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)95mΩ@4.5V,1A
Power Dissipation (Pd)500mW
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Input Capacitance (Ciss@Vds)330pF@15V
Total Gate Charge (Qg@Vgs)10nC@8V

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