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Vishay Intertech SI8483DB-T2-E1
| Manufacturer | |
| Mfr. Part # | SI8483DB-T2-E1 |
| EBEE Part # | E8142558 |
| Package | BGA-6 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 12V 16A 26mΩ@4.5V,1.5A 800mV@250uA 1 Piece P-Channel BGA-6 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3331 | $ 1.3331 |
| 10+ | $1.1733 | $ 11.7330 |
| 30+ | $1.0846 | $ 32.5380 |
| 100+ | $0.9869 | $ 98.6900 |
| 500+ | $0.9425 | $ 471.2500 |
| 1000+ | $0.9231 | $ 923.1000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI8483DB-T2-E1 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 12V | |
| Continuous Drain Current (Id) | 16A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 26mΩ@4.5V,1.5A | |
| Power Dissipation (Pd) | 2.77W;13W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 800mV@250uA | |
| Input Capacitance (Ciss@Vds) | 1.84nF@6V | |
| Total Gate Charge (Qg@Vgs) | 65nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3331 | $ 1.3331 |
| 10+ | $1.1733 | $ 11.7330 |
| 30+ | $1.0846 | $ 32.5380 |
| 100+ | $0.9869 | $ 98.6900 |
| 500+ | $0.9425 | $ 471.2500 |
| 1000+ | $0.9231 | $ 923.1000 |
