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Vishay Intertech SI7892BDP-T1-E3


Manufacturer
Mfr. Part #
SI7892BDP-T1-E3
EBEE Part #
E82925172
Package
SO-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
30V 25A 0.0042Ω@10V,25A 5W 1V@250uA 1 N-channel SO-8 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.0771$ 1.0771
10+$0.9032$ 9.0320
30+$0.8091$ 24.2730
100+$0.7009$ 70.0900
500+$0.6531$ 326.5500
1000+$0.6317$ 631.7000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI7892BDP-T1-E3
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.0042Ω@10V,25A
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)295pF@15V
Input Capacitance (Ciss@Vds)3.775nF@15V
Total Gate Charge (Qg@Vgs)40nC@15V

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