| Manufacturer | |
| Mfr. Part # | SI7112DN-T1-E3 |
| EBEE Part # | E85918265 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 17.8A 3.8W 7.5mΩ@10V,17.8A 1.5V@250uA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.2585 | $ 2.2585 |
| 200+ | $0.9010 | $ 180.2000 |
| 500+ | $0.8714 | $ 435.7000 |
| 1000+ | $0.8557 | $ 855.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI7112DN-T1-E3 | |
| RoHS | ||
| Operating Temperature | -50℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 17.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.5mΩ@10V,17.8A | |
| Power Dissipation (Pd) | 3.8W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF@15V | |
| Input Capacitance (Ciss@Vds) | 2.61nF@15V | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.2585 | $ 2.2585 |
| 200+ | $0.9010 | $ 180.2000 |
| 500+ | $0.8714 | $ 435.7000 |
| 1000+ | $0.8557 | $ 855.7000 |
