| Manufacturer | |
| Mfr. Part # | SI7108DN-T1-E3 |
| EBEE Part # | E86679652 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 14A 4.9mΩ@10V,22A 1.5W 2V@250uA 1 N-channel MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6997 | $ 2.6997 |
| 200+ | $1.0770 | $ 215.4000 |
| 500+ | $1.0424 | $ 521.2000 |
| 1000+ | $1.0241 | $ 1024.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI7108DN-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 14A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.9mΩ@10V,22A | |
| Power Dissipation (Pd) | 1.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Total Gate Charge (Qg@Vgs) | [email protected] |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6997 | $ 2.6997 |
| 200+ | $1.0770 | $ 215.4000 |
| 500+ | $1.0424 | $ 521.2000 |
| 1000+ | $1.0241 | $ 1024.1000 |
