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Vishay Intertech SI7104DN-T1-E3
| Manufacturer | |
| Mfr. Part # | SI7104DN-T1-E3 |
| EBEE Part # | E85918261 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 12V 35A 3.7mΩ@4.5V,26.1A 1.8V@250uA 1 N-channel MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6644 | $ 2.6644 |
| 200+ | $1.0631 | $ 212.6200 |
| 500+ | $1.0282 | $ 514.1000 |
| 1000+ | $1.0107 | $ 1010.7000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI7104DN-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 12V | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.7mΩ@4.5V,26.1A | |
| Power Dissipation (Pd) | 3.8W;52W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 520pF@6V | |
| Input Capacitance (Ciss@Vds) | 2.8nF@6V | |
| Total Gate Charge (Qg@Vgs) | 70nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6644 | $ 2.6644 |
| 200+ | $1.0631 | $ 212.6200 |
| 500+ | $1.0282 | $ 514.1000 |
| 1000+ | $1.0107 | $ 1010.7000 |
