| Manufacturer | |
| Mfr. Part # | SI5504BDC-T1-E3 |
| EBEE Part # | E8727747 |
| Package | SMD-8P,3.2x1.6mm |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 0.065Ω@10V,4A 1 N-Channel + 1 P-Channel ChipFET1206-8 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7251 | $ 0.7251 |
| 10+ | $0.7094 | $ 7.0940 |
| 30+ | $0.6983 | $ 20.9490 |
| 100+ | $0.6873 | $ 68.7300 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI5504BDC-T1-E3 | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| RDS(on) | 65mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;31pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 4A;3.7A | |
| Ciss-Input Capacitance | 220pF;170pF | |
| Output Capacitance(Coss) | 50pF | |
| Gate Charge(Qg) | 4.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7251 | $ 0.7251 |
| 10+ | $0.7094 | $ 7.0940 |
| 30+ | $0.6983 | $ 20.9490 |
| 100+ | $0.6873 | $ 68.7300 |
