| Manufacturer | |
| Mfr. Part # | SI4922BDY-T1-E3 |
| EBEE Part # | E83279865 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 8A 2W 0.016Ω@10V,8A 1.8V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1935 | $ 2.1935 |
| 200+ | $0.8497 | $ 169.9400 |
| 500+ | $0.8205 | $ 410.2500 |
| 1000+ | $0.8041 | $ 804.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI4922BDY-T1-E3 | |
| RoHS | ||
| Operating Temperature | -50℃~+150℃ | |
| Type | 2 N-Channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.016Ω@10V,8A | |
| Power Dissipation (Pd) | 2W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.8V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF@15V | |
| Input Capacitance (Ciss@Vds) | 2.07nF@15V | |
| Total Gate Charge (Qg@Vgs) | 62nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1935 | $ 2.1935 |
| 200+ | $0.8497 | $ 169.9400 |
| 500+ | $0.8205 | $ 410.2500 |
| 1000+ | $0.8041 | $ 804.1000 |
