| Manufacturer | |
| Mfr. Part # | SI4890DY-T1-E3 |
| EBEE Part # | E85917689 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 11A 12mΩ@10V,11A 1.6W 800mV@250uA 1 N-channel SOIC-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.7397 | $ 3.7397 |
| 200+ | $1.4917 | $ 298.3400 |
| 500+ | $1.4429 | $ 721.4500 |
| 1000+ | $1.4185 | $ 1418.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI4890DY-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 11A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@10V,11A | |
| Power Dissipation (Pd) | 1.6W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 800mV@250uA | |
| Total Gate Charge (Qg@Vgs) | 20nC@5V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.7397 | $ 3.7397 |
| 200+ | $1.4917 | $ 298.3400 |
| 500+ | $1.4429 | $ 721.4500 |
| 1000+ | $1.4185 | $ 1418.5000 |
