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Vishay Intertech SI4890DY-T1-E3


Manufacturer
Mfr. Part #
SI4890DY-T1-E3
EBEE Part #
E85917689
Package
SOIC-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
30V 11A 12mΩ@10V,11A 1.6W 800mV@250uA 1 N-channel SOIC-8 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.7397$ 3.7397
200+$1.4917$ 298.3400
500+$1.4429$ 721.4500
1000+$1.4185$ 1418.5000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI4890DY-T1-E3
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)11A
Drain Source On Resistance (RDS(on)@Vgs,Id)12mΩ@10V,11A
Power Dissipation (Pd)1.6W
Gate Threshold Voltage (Vgs(th)@Id)800mV@250uA
Total Gate Charge (Qg@Vgs)20nC@5V

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