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Vishay Intertech SI4666DY-T1-GE3


Manufacturer
Mfr. Part #
SI4666DY-T1-GE3
EBEE Part #
E8145349
Package
SOIC-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
25V 16.5A 10mΩ@10V,10A 5W 1.5V@250uA 1 N-channel SOIC-8 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.7360$ 1.7360
10+$1.7005$ 17.0050
30+$1.6757$ 50.2710
100+$1.6526$ 165.2600
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI4666DY-T1-GE3
RoHS
Type1 N-channel
Drain Source Voltage (Vdss)25V
Continuous Drain Current (Id)16.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,10A
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA

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