| Manufacturer | |
| Mfr. Part # | SI4666DY-T1-GE3 |
| EBEE Part # | E8145349 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 25V 16.5A 10mΩ@10V,10A 5W 1.5V@250uA 1 N-channel SOIC-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7360 | $ 1.7360 |
| 10+ | $1.7005 | $ 17.0050 |
| 30+ | $1.6757 | $ 50.2710 |
| 100+ | $1.6526 | $ 165.2600 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI4666DY-T1-GE3 | |
| RoHS | ||
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 25V | |
| Continuous Drain Current (Id) | 16.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,10A | |
| Power Dissipation (Pd) | 5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.7360 | $ 1.7360 |
| 10+ | $1.7005 | $ 17.0050 |
| 30+ | $1.6757 | $ 50.2710 |
| 100+ | $1.6526 | $ 165.2600 |
