| Manufacturer | |
| Mfr. Part # | SI4166DY-T1-GE3 |
| EBEE Part # | E867121 |
| Package | SO-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 30.5A 4.2W 0.0039Ω@10V,30A 2.4V@250uA 1 N-channel SOIC-8 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8456 | $ 0.8456 |
| 10+ | $0.8283 | $ 8.2830 |
| 30+ | $0.8172 | $ 24.5160 |
| 100+ | $0.8062 | $ 80.6200 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI4166DY-T1-GE3 | |
| RoHS | ||
| RDS(on) | 3.9mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 4.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V | |
| Current - Continuous Drain(Id) | 30.5A | |
| Ciss-Input Capacitance | 2.73nF | |
| Gate Charge(Qg) | 21.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8456 | $ 0.8456 |
| 10+ | $0.8283 | $ 8.2830 |
| 30+ | $0.8172 | $ 24.5160 |
| 100+ | $0.8062 | $ 80.6200 |
