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Vishay Intertech SI4166DY-T1-GE3


Manufacturer
Mfr. Part #
SI4166DY-T1-GE3
EBEE Part #
E867121
Package
SO-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
30V 30.5A 4.2W 0.0039Ω@10V,30A 2.4V@250uA 1 N-channel SOIC-8 MOSFETs ROHS
This materials supports customized cables!
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291 In Stock for Fast Shipping
291 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.8456$ 0.8456
10+$0.8283$ 8.2830
30+$0.8172$ 24.5160
100+$0.8062$ 80.6200
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI4166DY-T1-GE3
RoHS
RDS(on)3.9mΩ@10V
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)205pF
Number1 N-channel
Pd - Power Dissipation4.2W
Drain to Source Voltage30V
Gate Threshold Voltage (Vgs(th))2.4V
Current - Continuous Drain(Id)30.5A
Ciss-Input Capacitance2.73nF
Gate Charge(Qg)21.5nC@10V

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