| Manufacturer | |
| Mfr. Part # | SI4100DY-T1-E3 |
| EBEE Part # | E83289818 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 4.4A 0.063Ω@10V,4.4A 3.8W 2V@250uA 1 N-channel SOIC-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7967 | $ 0.7967 |
| 200+ | $0.3088 | $ 61.7600 |
| 500+ | $0.2982 | $ 149.1000 |
| 1000+ | $0.2928 | $ 292.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI4100DY-T1-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 4.4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.063Ω@10V,4.4A | |
| Power Dissipation (Pd) | 3.8W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF@50V | |
| Input Capacitance (Ciss@Vds) | 600pF@50V | |
| Total Gate Charge (Qg@Vgs) | 9nC@6V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7967 | $ 0.7967 |
| 200+ | $0.3088 | $ 61.7600 |
| 500+ | $0.2982 | $ 149.1000 |
| 1000+ | $0.2928 | $ 292.8000 |
