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Vishay Intertech SI4100DY-T1-E3


Manufacturer
Mfr. Part #
SI4100DY-T1-E3
EBEE Part #
E83289818
Package
SOIC-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
100V 4.4A 0.063Ω@10V,4.4A 3.8W 2V@250uA 1 N-channel SOIC-8 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.7967$ 0.7967
200+$0.3088$ 61.7600
500+$0.2982$ 149.1000
1000+$0.2928$ 292.8000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SI4100DY-T1-E3
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)4.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.063Ω@10V,4.4A
Power Dissipation (Pd)3.8W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)50pF@50V
Input Capacitance (Ciss@Vds)600pF@50V
Total Gate Charge (Qg@Vgs)9nC@6V

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