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Vishay Intertech Si2308BDS-T1-GE3


Manufacturer
Mfr. Part #
Si2308BDS-T1-GE3
EBEE Part #
E812298
Package
SOT-23-3
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
60V 2.3A 0.156Ω@10V,2.3A 1.09W 1V@250uA 1 N-channel SOT-23-3 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.2336$ 0.2336
10+$0.1880$ 1.8800
30+$0.1685$ 5.0550
100+$0.1441$ 14.4100
500+$0.1332$ 66.6000
1000+$0.0998$ 99.8000
TypeDescription
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CategoryTransistors/Thyristors ,MOSFETs
DatasheetVishay Intertech Si2308BDS-T1-GE3
RoHS
TypeN-Channel
RDS(on)192mΩ@4.5V
Operating Temperature --
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Pd - Power Dissipation1.8W
Drain to Source Voltage60V
Gate Threshold Voltage (Vgs(th))3V
Current - Continuous Drain(Id)2.3A
Ciss-Input Capacitance-
Output Capacitance(Coss)-
Gate Charge(Qg)6.8nC@10V

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