| Manufacturer | |
| Mfr. Part # | Si2308BDS-T1-GE3 |
| EBEE Part # | E812298 |
| Package | SOT-23-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 2.3A 0.156Ω@10V,2.3A 1.09W 1V@250uA 1 N-channel SOT-23-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2336 | $ 0.2336 |
| 10+ | $0.1880 | $ 1.8800 |
| 30+ | $0.1685 | $ 5.0550 |
| 100+ | $0.1441 | $ 14.4100 |
| 500+ | $0.1332 | $ 66.6000 |
| 1000+ | $0.0998 | $ 99.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Vishay Intertech Si2308BDS-T1-GE3 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 192mΩ@4.5V | |
| Operating Temperature - | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.8W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 6.8nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2336 | $ 0.2336 |
| 10+ | $0.1880 | $ 1.8800 |
| 30+ | $0.1685 | $ 5.0550 |
| 100+ | $0.1441 | $ 14.4100 |
| 500+ | $0.1332 | $ 66.6000 |
| 1000+ | $0.0998 | $ 99.8000 |
