| Manufacturer | |
| Mfr. Part # | Si2302CDS-T1-GE3 |
| EBEE Part # | E810488 |
| Package | SOT-23 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 2.9A 0.057Ω@4.5V,3.6A 550mW 850mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0757 | $ 0.7570 |
| 100+ | $0.0628 | $ 6.2800 |
| 300+ | $0.0561 | $ 16.8300 |
| 3000+ | $0.0454 | $ 136.2000 |
| 6000+ | $0.0435 | $ 261.0000 |
| 9000+ | $0.0422 | $ 379.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Vishay Intertech Si2302CDS-T1-GE3 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 75mΩ@2.5V | |
| Operating Temperature - | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 550mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Current - Continuous Drain(Id) | 2.9A | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 3.5nC@10V,4.5V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0757 | $ 0.7570 |
| 100+ | $0.0628 | $ 6.2800 |
| 300+ | $0.0561 | $ 16.8300 |
| 3000+ | $0.0454 | $ 136.2000 |
| 6000+ | $0.0435 | $ 261.0000 |
| 9000+ | $0.0422 | $ 379.8000 |
