| Manufacturer | |
| Mfr. Part # | SI1926DL-T1-E3 |
| EBEE Part # | E8727310 |
| Package | SOT-363 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 0.37A 1.4Ω@10V,0.34A 300mW 1V@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2660 | $ 1.3300 |
| 50+ | $0.2149 | $ 10.7450 |
| 150+ | $0.1930 | $ 28.9500 |
| 500+ | $0.1657 | $ 82.8500 |
| 3000+ | $0.1536 | $ 460.8000 |
| 6000+ | $0.1463 | $ 877.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SI1926DL-T1-E3 | |
| RoHS | ||
| RDS(on) | 1.4Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 300mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 370mA | |
| Ciss-Input Capacitance | 18.5pF | |
| Gate Charge(Qg) | 900pC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2660 | $ 1.3300 |
| 50+ | $0.2149 | $ 10.7450 |
| 150+ | $0.1930 | $ 28.9500 |
| 500+ | $0.1657 | $ 82.8500 |
| 3000+ | $0.1536 | $ 460.8000 |
| 6000+ | $0.1463 | $ 877.8000 |
