| Manufacturer | |
| Mfr. Part # | IRFIB5N65APBF |
| EBEE Part # | E85772309 |
| Package | TO-220-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 5.1A 930mΩ@10V,3.1A 60W 2V@250uA 1 N-channel TO-220-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.0420 | $ 6.0420 |
| 200+ | $2.4113 | $ 482.2600 |
| 500+ | $2.3311 | $ 1165.5500 |
| 1000+ | $2.2909 | $ 2290.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY IRFIB5N65APBF | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 5.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 930mΩ@10V,3.1A | |
| Power Dissipation (Pd) | 60W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.417nF@25V | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $6.0420 | $ 6.0420 |
| 200+ | $2.4113 | $ 482.2600 |
| 500+ | $2.3311 | $ 1165.5500 |
| 1000+ | $2.2909 | $ 2290.9000 |
