| Manufacturer | |
| Mfr. Part # | IRFBE30SPBF |
| EBEE Part # | E8506483 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 4.1A 3Ω@10V,2.5A 125W 2V@250uA 1 N-channel D2PAK(TO-263AB) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2056 | $ 4.2056 |
| 10+ | $3.6287 | $ 36.2870 |
| 50+ | $3.2835 | $ 164.1750 |
| 100+ | $2.9367 | $ 293.6700 |
| 500+ | $2.7759 | $ 1387.9500 |
| 1000+ | $2.7034 | $ 2703.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY IRFBE30SPBF | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 4.1A | |
| Ciss-Input Capacitance | 1.3nF | |
| Output Capacitance(Coss) | 310pF | |
| Gate Charge(Qg) | 78nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2056 | $ 4.2056 |
| 10+ | $3.6287 | $ 36.2870 |
| 50+ | $3.2835 | $ 164.1750 |
| 100+ | $2.9367 | $ 293.6700 |
| 500+ | $2.7759 | $ 1387.9500 |
| 1000+ | $2.7034 | $ 2703.4000 |
