| Manufacturer | |
| Mfr. Part # | IRFBE30LPBF |
| EBEE Part # | E87211048 |
| Package | I2PAK |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 4.1A 3Ω@10V,2.5A 125W 4V@250uA 1 N-channel I2PAK MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2511 | $ 3.2511 |
| 200+ | $1.2979 | $ 259.5800 |
| 500+ | $1.2541 | $ 627.0500 |
| 1000+ | $1.2321 | $ 1232.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 4.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3Ω@10V,2.5A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V | |
| Total Gate Charge (Qg@Vgs) | 78nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2511 | $ 3.2511 |
| 200+ | $1.2979 | $ 259.5800 |
| 500+ | $1.2541 | $ 627.0500 |
| 1000+ | $1.2321 | $ 1232.1000 |
