Recommonended For You
Images are for reference only
Add to Favourites
Vishay Intertech 2N7002E-T1-GE3
| Manufacturer | |
| Mfr. Part # | 2N7002E-T1-GE3 |
| EBEE Part # | E8727275 |
| Package | SOT-23 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 240mA 3Ω@10V,250mA 350mW 2.5V@250uA 1 N-channel TO-236 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5912 | $ 0.5912 |
| 10+ | $0.4824 | $ 4.8240 |
| 30+ | $0.4272 | $ 12.8160 |
| 100+ | $0.3736 | $ 37.3600 |
| 500+ | $0.3263 | $ 163.1500 |
| 1000+ | $0.3090 | $ 309.0000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY 2N7002E-T1-GE3 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 240mA | |
| Ciss-Input Capacitance | 25pF | |
| Gate Charge(Qg) | 600pC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5912 | $ 0.5912 |
| 10+ | $0.4824 | $ 4.8240 |
| 30+ | $0.4272 | $ 12.8160 |
| 100+ | $0.3736 | $ 37.3600 |
| 500+ | $0.3263 | $ 163.1500 |
| 1000+ | $0.3090 | $ 309.0000 |
