15% off
| Manufacturer | |
| Mfr. Part # | VBZE80N03 |
| EBEE Part # | E8700660 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 35.8A 3.75W 2.5V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5047 | $ 0.5047 |
| 10+ | $0.4103 | $ 4.1030 |
| 30+ | $0.3630 | $ 10.8900 |
| 100+ | $0.3172 | $ 31.7200 |
| 500+ | $0.2524 | $ 126.2000 |
| 1000+ | $0.2376 | $ 237.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBZE80N03 | |
| RoHS | ||
| RDS(on) | - | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 35.8A | |
| Ciss-Input Capacitance | 5.201nF | |
| Gate Charge(Qg) | - |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5047 | $ 0.5047 |
| 10+ | $0.4103 | $ 4.1030 |
| 30+ | $0.3630 | $ 10.8900 |
| 100+ | $0.3172 | $ 31.7200 |
| 500+ | $0.2524 | $ 126.2000 |
| 1000+ | $0.2376 | $ 237.6000 |
