5% off
| Manufacturer | |
| Mfr. Part # | VBZE40N10 |
| EBEE Part # | E8700642 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 30A 55W 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7421 | $ 0.7421 |
| 10+ | $0.5989 | $ 5.9890 |
| 30+ | $0.5265 | $ 15.7950 |
| 100+ | $0.4540 | $ 45.4000 |
| 500+ | $0.4118 | $ 205.9000 |
| 1000+ | $0.3892 | $ 389.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBZE40N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 35mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 4nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 35nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7421 | $ 0.7421 |
| 10+ | $0.5989 | $ 5.9890 |
| 30+ | $0.5265 | $ 15.7950 |
| 100+ | $0.4540 | $ 45.4000 |
| 500+ | $0.4118 | $ 205.9000 |
| 1000+ | $0.3892 | $ 389.2000 |
