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VBsemi Elec VBZE30N10
| Manufacturer | |
| Mfr. Part # | VBZE30N10 |
| EBEE Part # | E8700639 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 35A 100W 3V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>38 In Stock for Fast Shipping
38 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7166 | $ 0.7166 |
| 10+ | $0.5871 | $ 5.8710 |
| 30+ | $0.5223 | $ 15.6690 |
| 100+ | $0.4589 | $ 45.8900 |
| 500+ | $0.3712 | $ 185.6000 |
| 1000+ | $0.3510 | $ 351.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBZE30N10 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 50mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 4nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 35nC@10V |
Shopping Guide
Expand
38 Stock for Shipping Fast
38 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7166 | $ 0.7166 |
| 10+ | $0.5871 | $ 5.8710 |
| 30+ | $0.5223 | $ 15.6690 |
| 100+ | $0.4589 | $ 45.8900 |
| 500+ | $0.3712 | $ 185.6000 |
| 1000+ | $0.3510 | $ 351.0000 |
Best price for more quantity?
$
