| Manufacturer | |
| Mfr. Part # | VBZE30N06 |
| EBEE Part # | E8700638 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 35A 100W 1V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2671 | $ 0.2671 |
| 10+ | $0.2611 | $ 2.6110 |
| 30+ | $0.2580 | $ 7.7400 |
| 100+ | $0.2535 | $ 25.3500 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBZE30N06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 25mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 670pF | |
| Output Capacitance(Coss) | 140pF | |
| Gate Charge(Qg) | 11nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.2671 | $ 0.2671 |
| 10+ | $0.2611 | $ 2.6110 |
| 30+ | $0.2580 | $ 7.7400 |
| 100+ | $0.2535 | $ 25.3500 |
