| Manufacturer | |
| Mfr. Part # | VBZA4435 |
| EBEE Part # | E8416342 |
| Package | SO-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 9A 2.5W 0.018Ω@10V,7A 1V@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3831 | $ 1.9155 |
| 50+ | $0.3063 | $ 15.3150 |
| 150+ | $0.2733 | $ 40.9950 |
| 500+ | $0.2069 | $ 103.4500 |
| 2500+ | $0.1886 | $ 471.5000 |
| 4000+ | $0.1776 | $ 710.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBZA4435 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 24mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 1.455nF | |
| Gate Charge(Qg) | 20nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3831 | $ 1.9155 |
| 50+ | $0.3063 | $ 15.3150 |
| 150+ | $0.2733 | $ 40.9950 |
| 500+ | $0.2069 | $ 103.4500 |
| 2500+ | $0.1886 | $ 471.5000 |
| 4000+ | $0.1776 | $ 710.4000 |
