| Manufacturer | |
| Mfr. Part # | VBQF4338 |
| EBEE Part # | E87541170 |
| Package | DFN-8(3x3) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 6.4A 2.8W 1V@250uA 2 P-Channel DFN-8(3x3) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7891 | $ 0.7891 |
| 10+ | $0.6367 | $ 6.3670 |
| 30+ | $0.5621 | $ 16.8630 |
| 100+ | $0.4859 | $ 48.5900 |
| 500+ | $0.4303 | $ 215.1500 |
| 1000+ | $0.4081 | $ 408.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBQF4338 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 38mΩ@10V;60mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 2.8W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 6.4A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 14nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7891 | $ 0.7891 |
| 10+ | $0.6367 | $ 6.3670 |
| 30+ | $0.5621 | $ 16.8630 |
| 100+ | $0.4859 | $ 48.5900 |
| 500+ | $0.4303 | $ 215.1500 |
| 1000+ | $0.4081 | $ 408.1000 |
