15% off
| Manufacturer | |
| Mfr. Part # | VBMB1203M |
| EBEE Part # | E8481029 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 6.5A 37W 0.265Ω@10V,4.3A 4V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6541 | $ 0.6541 |
| 10+ | $0.5323 | $ 5.3230 |
| 50+ | $0.4322 | $ 21.6100 |
| 100+ | $0.3720 | $ 37.2000 |
| 500+ | $0.3347 | $ 167.3500 |
| 1000+ | $0.3168 | $ 316.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBMB1203M | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 265mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 37W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 560pF | |
| Output Capacitance(Coss) | 260pF | |
| Gate Charge(Qg) | 16nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6541 | $ 0.6541 |
| 10+ | $0.5323 | $ 5.3230 |
| 50+ | $0.4322 | $ 21.6100 |
| 100+ | $0.3720 | $ 37.2000 |
| 500+ | $0.3347 | $ 167.3500 |
| 1000+ | $0.3168 | $ 316.8000 |
