15% off
| Manufacturer | |
| Mfr. Part # | VBMB1101M |
| EBEE Part # | E8481027 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 18A 0.086Ω@10V,10A 48W 3V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5412 | $ 0.5412 |
| 10+ | $0.4394 | $ 4.3940 |
| 50+ | $0.3890 | $ 19.4500 |
| 100+ | $0.3388 | $ 33.8800 |
| 500+ | $0.3084 | $ 154.2000 |
| 1000+ | $0.2938 | $ 293.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBMB1101M | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 86mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 48W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.7nF | |
| Output Capacitance(Coss) | 560pF | |
| Gate Charge(Qg) | 72nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5412 | $ 0.5412 |
| 10+ | $0.4394 | $ 4.3940 |
| 50+ | $0.3890 | $ 19.4500 |
| 100+ | $0.3388 | $ 33.8800 |
| 500+ | $0.3084 | $ 154.2000 |
| 1000+ | $0.2938 | $ 293.8000 |
