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VBsemi Elec VBFB2610N
| Manufacturer | |
| Mfr. Part # | VBFB2610N |
| EBEE Part # | E8480975 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 11A 0.066Ω@10V,30A 3W 1V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>20 In Stock for Fast Shipping
20 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4374 | $ 0.4374 |
| 10+ | $0.3472 | $ 3.4720 |
| 30+ | $0.3096 | $ 9.2880 |
| 80+ | $0.2611 | $ 20.8880 |
| 480+ | $0.2395 | $ 114.9600 |
| 800+ | $0.2261 | $ 180.8800 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBFB2610N | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 66mΩ@10V;80mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.2nF | |
| Output Capacitance(Coss) | 200pF | |
| Gate Charge(Qg) | 40nC@10V |
Shopping Guide
Expand
20 Stock for Shipping Fast
20 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4374 | $ 0.4374 |
| 10+ | $0.3472 | $ 3.4720 |
| 30+ | $0.3096 | $ 9.2880 |
| 80+ | $0.2611 | $ 20.8880 |
| 480+ | $0.2395 | $ 114.9600 |
| 800+ | $0.2261 | $ 180.8800 |
Best price for more quantity?
$
