| Manufacturer | |
| Mfr. Part # | VBFB2102M |
| EBEE Part # | E8480972 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 15A 2.5W 0.215Ω@10V,3.6A 1V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4914 | $ 0.4914 |
| 10+ | $0.3865 | $ 3.8650 |
| 30+ | $0.3424 | $ 10.2720 |
| 100+ | $0.2853 | $ 28.5300 |
| 500+ | $0.2614 | $ 130.7000 |
| 1000+ | $0.2467 | $ 246.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBFB2102M | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 15A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.215Ω@10V,3.6A | |
| Power Dissipation (Pd) | 2.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.055nF@50V | |
| Total Gate Charge (Qg@Vgs) | 11nC@50V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4914 | $ 0.4914 |
| 10+ | $0.3865 | $ 3.8650 |
| 30+ | $0.3424 | $ 10.2720 |
| 100+ | $0.2853 | $ 28.5300 |
| 500+ | $0.2614 | $ 130.7000 |
| 1000+ | $0.2467 | $ 246.7000 |
