| Manufacturer | |
| Mfr. Part # | VBF2355 |
| EBEE Part # | E8480959 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 7.9A 2.7W 72mΩ 1.4V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2703 | $ 1.3515 |
| 50+ | $0.2123 | $ 10.6150 |
| 160+ | $0.1874 | $ 29.9840 |
| 480+ | $0.1564 | $ 75.0720 |
| 2400+ | $0.1425 | $ 342.0000 |
| 4800+ | $0.1343 | $ 644.6400 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBF2355 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 56mΩ@10V;72mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 20W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.15nF | |
| Output Capacitance(Coss) | 205pF | |
| Gate Charge(Qg) | 27nC@10V;[email protected] |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2703 | $ 1.3515 |
| 50+ | $0.2123 | $ 10.6150 |
| 160+ | $0.1874 | $ 29.9840 |
| 480+ | $0.1564 | $ 75.0720 |
| 2400+ | $0.1425 | $ 342.0000 |
| 4800+ | $0.1343 | $ 644.6400 |
