5% off
| Manufacturer | |
| Mfr. Part # | VBE2658 |
| EBEE Part # | E8416267 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 35A 38.5W 0.046Ω@10V,10A 1V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6351 | $ 0.6351 |
| 10+ | $0.5144 | $ 5.1440 |
| 30+ | $0.4540 | $ 13.6200 |
| 100+ | $0.3952 | $ 39.5200 |
| 500+ | $0.3410 | $ 170.5000 |
| 1000+ | $0.3228 | $ 322.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec VBE2658 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 46mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 1.9nF | |
| Output Capacitance(Coss) | 130pF | |
| Gate Charge(Qg) | 26nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6351 | $ 0.6351 |
| 10+ | $0.5144 | $ 5.1440 |
| 30+ | $0.4540 | $ 13.6200 |
| 100+ | $0.3952 | $ 39.5200 |
| 500+ | $0.3410 | $ 170.5000 |
| 1000+ | $0.3228 | $ 322.8000 |
