15% off
| Manufacturer | |
| Mfr. Part # | TK7A65D-VB |
| EBEE Part # | E819632179 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 10A 830mΩ@10V 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9217 | $ 0.9217 |
| 10+ | $0.7687 | $ 7.6870 |
| 50+ | $0.6854 | $ 34.2700 |
| 100+ | $0.5899 | $ 58.9900 |
| 500+ | $0.5489 | $ 274.4500 |
| 1000+ | $0.5298 | $ 529.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec TK7A65D-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 820mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 178W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.9nF | |
| Output Capacitance(Coss) | 400pF | |
| Gate Charge(Qg) | 57nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9217 | $ 0.9217 |
| 10+ | $0.7687 | $ 7.6870 |
| 50+ | $0.6854 | $ 34.2700 |
| 100+ | $0.5899 | $ 58.9900 |
| 500+ | $0.5489 | $ 274.4500 |
| 1000+ | $0.5298 | $ 529.8000 |
