15% off
| Manufacturer | |
| Mfr. Part # | TK4P60DA-VB |
| EBEE Part # | E819626665 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 4A 2.2Ω@10V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4508 | $ 0.4508 |
| 10+ | $0.3536 | $ 3.5360 |
| 30+ | $0.3118 | $ 9.3540 |
| 100+ | $0.2605 | $ 26.0500 |
| 500+ | $0.2376 | $ 118.8000 |
| 1000+ | $0.2241 | $ 224.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec TK4P60DA-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 2.1Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF | |
| Output Capacitance(Coss) | 177pF | |
| Gate Charge(Qg) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4508 | $ 0.4508 |
| 10+ | $0.3536 | $ 3.5360 |
| 30+ | $0.3118 | $ 9.3540 |
| 100+ | $0.2605 | $ 26.0500 |
| 500+ | $0.2376 | $ 118.8000 |
| 1000+ | $0.2241 | $ 224.1000 |
