| Manufacturer | |
| Mfr. Part # | TK11A65W-VB |
| EBEE Part # | E822357219 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 10A 360mΩ@10V 4.5V 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4004 | $ 1.4004 |
| 10+ | $1.1591 | $ 11.5910 |
| 50+ | $1.0257 | $ 51.2850 |
| 100+ | $0.8749 | $ 87.4900 |
| 500+ | $0.8082 | $ 404.1000 |
| 1000+ | $0.7780 | $ 778.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec TK11A65W-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 360mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 320W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 2.3nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 95nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4004 | $ 1.4004 |
| 10+ | $1.1591 | $ 11.5910 |
| 50+ | $1.0257 | $ 51.2850 |
| 100+ | $0.8749 | $ 87.4900 |
| 500+ | $0.8082 | $ 404.1000 |
| 1000+ | $0.7780 | $ 778.0000 |
