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VBsemi Elec STSJ2NM60-VB
| Manufacturer | |
| Mfr. Part # | STSJ2NM60-VB |
| EBEE Part # | E841370556 |
| Package | SO-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 4A 60W 2.1Ω@10V,3.1A 2V@250uA 1 N-channel SO-8 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7952 | $ 0.7952 |
| 200+ | $0.3181 | $ 63.6200 |
| 500+ | $0.3072 | $ 153.6000 |
| 1000+ | $0.3016 | $ 301.6000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STSJ2NM60-VB | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.1Ω@10V,3.1A | |
| Power Dissipation (Pd) | 60W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 1912pF | |
| Input Capacitance (Ciss@Vds) | 1417pF | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7952 | $ 0.7952 |
| 200+ | $0.3181 | $ 63.6200 |
| 500+ | $0.3072 | $ 153.6000 |
| 1000+ | $0.3016 | $ 301.6000 |
