| Manufacturer | |
| Mfr. Part # | STF26N65DM2-VB |
| EBEE Part # | E822357199 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 20A 160mΩ@10V 4.5V 1 N-channel TO-220F MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6372 | $ 2.6372 |
| 10+ | $2.2323 | $ 22.3230 |
| 50+ | $1.9783 | $ 98.9150 |
| 100+ | $1.7179 | $ 171.7900 |
| 500+ | $1.6004 | $ 800.2000 |
| 1000+ | $1.5496 | $ 1549.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STF26N65DM2-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 160mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 280W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.27nF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 8.9nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.6372 | $ 2.6372 |
| 10+ | $2.2323 | $ 22.3230 |
| 50+ | $1.9783 | $ 98.9150 |
| 100+ | $1.7179 | $ 171.7900 |
| 500+ | $1.6004 | $ 800.2000 |
| 1000+ | $1.5496 | $ 1549.6000 |
