5% off
| Manufacturer | |
| Mfr. Part # | STD80N6F6-VB |
| EBEE Part # | E87429123 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 120A 57W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0403 | $ 1.0403 |
| 10+ | $0.8686 | $ 8.6860 |
| 30+ | $0.7747 | $ 23.2410 |
| 100+ | $0.6691 | $ 66.9100 |
| 500+ | $0.5708 | $ 285.4000 |
| 1000+ | $0.5488 | $ 548.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD80N6F6-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 57W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 97A | |
| Ciss-Input Capacitance | 4.844nF | |
| Output Capacitance(Coss) | 441pF | |
| Gate Charge(Qg) | 82nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0403 | $ 1.0403 |
| 10+ | $0.8686 | $ 8.6860 |
| 30+ | $0.7747 | $ 23.2410 |
| 100+ | $0.6691 | $ 66.9100 |
| 500+ | $0.5708 | $ 285.4000 |
| 1000+ | $0.5488 | $ 548.8000 |
