| Manufacturer | |
| Mfr. Part # | STD7NS20-VB |
| EBEE Part # | E841370534 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 10A 3W 0.245Ω@10V,3A 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0694 | $ 1.0694 |
| 200+ | $0.4278 | $ 85.5600 |
| 500+ | $0.4132 | $ 206.6000 |
| 1000+ | $0.4058 | $ 405.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD7NS20-VB | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 10A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.245Ω@10V,3A | |
| Power Dissipation (Pd) | 3W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.8nF@25V | |
| Total Gate Charge (Qg@Vgs) | 51nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0694 | $ 1.0694 |
| 200+ | $0.4278 | $ 85.5600 |
| 500+ | $0.4132 | $ 206.6000 |
| 1000+ | $0.4058 | $ 405.8000 |
