| Manufacturer | |
| Mfr. Part # | STD7N65M2-VB |
| EBEE Part # | E822357269 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 5A 950mΩ@10V 4V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8987 | $ 0.8987 |
| 10+ | $0.7240 | $ 7.2400 |
| 30+ | $0.6351 | $ 19.0530 |
| 100+ | $0.5494 | $ 54.9400 |
| 500+ | $0.4970 | $ 248.5000 |
| 1000+ | $0.4700 | $ 470.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD7N65M2-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 1Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 1.1nF | |
| Output Capacitance(Coss) | 51pF | |
| Gate Charge(Qg) | 25nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8987 | $ 0.8987 |
| 10+ | $0.7240 | $ 7.2400 |
| 30+ | $0.6351 | $ 19.0530 |
| 100+ | $0.5494 | $ 54.9400 |
| 500+ | $0.4970 | $ 248.5000 |
| 1000+ | $0.4700 | $ 470.0000 |
