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VBsemi Elec STD65N160M9-VB
| Manufacturer | |
| Mfr. Part # | STD65N160M9-VB |
| EBEE Part # | E822357256 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 20A 160mΩ@10V 4V 1 N-channel TO-252 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>47 In Stock for Fast Shipping
47 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1330 | $ 2.1330 |
| 10+ | $1.8052 | $ 18.0520 |
| 30+ | $1.5997 | $ 47.9910 |
| 100+ | $1.3898 | $ 138.9800 |
| 500+ | $1.2946 | $ 647.3000 |
| 1000+ | $1.2538 | $ 1253.8000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD65N160M9-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 160mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.8nF | |
| Output Capacitance(Coss) | 51pF | |
| Gate Charge(Qg) | 205nC@10V |
Shopping Guide
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47 Stock for Shipping Fast
47 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1330 | $ 2.1330 |
| 10+ | $1.8052 | $ 18.0520 |
| 30+ | $1.5997 | $ 47.9910 |
| 100+ | $1.3898 | $ 138.9800 |
| 500+ | $1.2946 | $ 647.3000 |
| 1000+ | $1.2538 | $ 1253.8000 |
Best price for more quantity?
$
